Infrared Photodetector

Image obtained from www.erco.com

The Universidad Politécnica de Madrid has submitted a patent application for a device for intermediate band infrared photodetector and quantum dots.

The invention relates to an infrared photodetector containing a region with semiconductor quantum dots. This region with n-type doping is between two semiconducting layers n and p type.

The absorption of infrared photons causes the appearance of a voltage between the contacts of the device or the production of an electric current, making possible the detection of infrared light.